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Hand scribe mark
in the manufacture of silicon wafers, any marking, usually on the back surface of a wafer, scratched manually into the silicon surface, as with a diamond tipped scribe, for purposes of wafer identification.
Handler
equipment for manipulating packaged integrated circuits during the testing process.
Hard bake
heat treatment of a wafer after develop to fully harden the resist prior to etch. Also see post-exposure bake.
Hardware
The physical components of a circuit or system, both passive and active. Compare software.
Hardware safety
a circuit of electromechanical components, wiring, or light links that override associated programmed machine controls. When the circuit is interrupted, final control elements are not allowed to operate.
Hardware/software co-design
a style of system design that considers whether specific system functions should be realized as software or as hardware, by analyzing trade-offs between design alternatives.
Hardwired interlock
an electromechanical connection through which interlock conditions are verified.
Harsh environment
Conditions such as radiation exposure, temperature extremes, vibration, and dirt encountered by the military, on factory floors, and under the hoods of automobiles.
Hazard
a set of recognizable conditions with the potential for initiating an event that could result in death, injury, or illness to people, and/or facility/equipment damage.
Hazardous gases
gases supplied in cylinders that are listed in National Fire Protection Association (NFPA) 49 with a degree of hazard rating 3 or 4 in Health, Flammability, or Reactivity, or which would be so rated by experienced, technically competent persons when evaluated in accordance with the criteria set forth in NFPA 704.
Hazardous materials
1: those chemicals or substances that are physical hazards or health hazards as defined and classified in National Fire Protection Association (NFPA) 704, whether the materials are in use or in waste conditions. 2: substances or mixtures having properties capable of producing adverse effects on the health or safety of a human.
Hazardous Production Materials (HPM)
1: the chemicals and specialty gases used in processing wafers. 2: a solid, liquid, or gas that has a degree-of-hazard rating in health, flammability, or reactivity of Class 3 or 4 as ranked by Uniform Fire Code (UFC) Standard No. 79-3 and that is used directly in research, laboratory, or production processes with nonhazardous end products.
Hazardous voltage
see National Electric Code (NEC) hazardous voltage.
HAZCOM
1: an online VAX computer material safety data sheet (MSDS) inventory maintained to comply with requirements of the Occupational Safety and Health Administration (OSHA) Hazard Communication Standard. Using HAZCOM allows anyone on site to access MSDS and other personal chemical safety information. 2: the Hazard Communication Standard, a piece of legislation that requires chemical manufacturers and importers to assess the hazards associated with the materials in their workplace and to inform workers of those hazards.
Haze
on a semiconductor wafer, nonlocalized light scattering resulting from surface topography (microroughness) or from dense concentrations of surface or near-surface imperfections. Also see laser-scattering light event. .
H-bar
see crossbar.
HDP
See high density plasma.
HDPCVD
See high density plasma CVD.
Header
in SECS-I, a 10-byte data element used by the message and transaction protocols. NOTE-The header is contained in each block of a message. The operation of all communications functions above the block transfer protocol is linked to information in the header.
Health hazards
a classification of a chemical for which there is statistically significant evidence, based on at least one study that was conducted in accordance with established scientific principles, that acute or chronic health effects may occur in exposed persons. Also see other health hazard.
Heat exchange area
in cofired ceramic packages, a metallized region on one major surface of the package to which heat sinks may be attached by brazing, soldering, or adhesive resin.
Heat exchanger
a module or piece of equipment used to transfer heat from one medium to another without contact between the media, such as from a chemical bath to a chiller.
Heat sink
a heat-conductive metal form attached to a device package to transmit heat away from the source.
Heat trace
heating of a component, spool piece, or test stand by a uniform and complete wrapping of the item with resistant heat tape.
Heavy ion backscattering
an analytical technique similar to Rutherford backscattering but which uses heavy ions as the probe.
Helium (He)
a rare gas or cryogenic liquid that is inert, colorless, odorless, and tasteless. Helium is used as an inert gas in systems for purging, blanketing, and pressurizing and as a carrier gas. It also is used as a substitute for argon in many plasma and annealing processes.
Helium leak rate
the rate of helium leakage into or out of a gas system, component, fitting, or vessel. The helium leak rate is expressed in standard cubic centimeters per second.
Helium mass spectrometer leak detector
an analytical instrument designed to detect leakage of helium into or out of a gas system.
HEPA
see high-efficiency particulate air (HEPA) filter.
Hermetic seal
a coat applied in the final stage of thermal processing to seal the ceramic package and to protect the device from the external environment.
Hertz (Hz)
a term applied to the number of repetitions of a periodic wave per second.
Heteroepitaxy
a type of epitaxy in which a single-crystal layer is grown on a substrate of different material that has a compatible crystal structure. Contrast homoepitaxy.
Heterogeneous environment
an environment that contains a collection of platforms having both similar and significantly different parts.
Heuristic
pertaining to exploratory methods of problem solving in which solutions are discovered by evaluation of the progress made toward the end result. Contrast algorithmic.
Hexachlorobutadiene (C4Cl6)
a poisonous, possibly carcinogenic gas present in plasma aluminum etchers. Also see dry plasma etch.
Hexachloroethane (C2Cl6)
a poisonous, possibly carcinogenic gas present in plasma aluminum etchers. Also see dry plasma etch.
Hexafluoroethane (C2F6)
a chemical compound; one of the most stable of all organic compounds. It is inert, colorless, nonflammable, odorless, and tasteless. Hexafluoroethane is used as a plasma etchant and in the cleaning of deposition equipment.
Hexamethyldisilazane (HMDS)
a chemical compound used as a preresist wafer treatment to improve adhesion of resist to wafers.
Hexode
a six-electrode electron tube containing an anode, a cathode, a control electrode, and three additional electrodes that, ordinarily, are grids. (Copyright 1993 IEEE. All rights reserved.)
Hierarchical design
concurrent, incremental design. See design process.
Hierarchical design methodology
see self-consistent top-down design.
High density plasma (HDP)
Plasma with a high concentration of reactive elements in it. High density plasmas are used in advanced plasma etchers and CVD machines
High density plasma CVD (HDPCVD)
A chemical vapor deposition technique in which a concentrated plasma is created. This suppresses the bulging at outside corners that standard CVD films tend to show. HDPCVD is thus a good solution to the problem of getting insulating films to fill in between narrowly spaced metal lines (the gap fill problem). Gap fill is becoming more and more of an issue as semiconductor manufacturers scale down circuit dimensions.
High density plasma etcher
An advanced etcher which uses a high density plasma. This results in a better capability for etching small geometries with straight vertical walls (especially difficult for small deep holes) and good selectivity (etching only the layer to be patterned and not attacking the layer beneath).
High k dielectric
An insulator which will not conduct electricity but which when sandwiched between metal plates will easily allow these plates to talk to each other via electric fields (this is called a capacitor structure). These can be used as memories, and one structure that is being considered for very high density DRAMs (dynamic random access memories) is a layer of barium strontium titanate (BST - a high k dielectric) between platinum electrodes. While high k dielectrics are good for capacitors, the opposite is true of the insulators used to separate metal lines, for which low k dielectrics are desirable (see low k dielectric).
High voltage
see National Electric Code (NEC) high voltage.
High-current implanter
a subtype of ion implanters which is typified by beam currents in excess of 3 mA and by the use of batch processing.
High-efficiency particulate air (HEPA) filter
a replaceable extended media, dry-type filter in a rigid frame and having a minimum particle-collection efficiency of 99.97% on all particles larger than 0.3 micrometer.
High-level language
An application-oriented programming language, as distinguished from a machine-oriented programming language. The instruction approach is closer to the needs of the problems to be solved than it is to the language of the machine on which it is to be run. Examples are Ada, C, COBOL, FORTRAN, Lisp and Pascal.
Highly oriented pyrolytic graphite (HOPG)
a type of pure, highly laminar graphite used as an atomic-scale calibration standard for atomic force microscopy and scanning tunneling microscopy.
Highly toxic gas
a chemical that has a median lethal concentration (LC50) in air of 200 parts per million by volume or less of gas or vapor, or 2 milligrams per liter or less of mist, fume, or dust, when administered by continuous inhalation for one hour (or less if death occurs within one hour) to albino rats weighing between 200 and 300 grams each.
Highly toxic material
material that produces a lethal dose or lethal concentration that falls within any of the following categories: 1. a chemical that has a median lethal dose (LD50) of 50 milligrams or less per kilogram of body weight when administered orally to albino rats weighing between 200 and 300 grams each
High-pressure isolation (HPI) valve
a shutoff valve located on the high-pressure side of a gas piping system that, when closed, isolates the purged volume from the pressure regulator and other downstream components.
High-pressure purge system
a purge system in which the purged volume is entirely on the high-pressure side of the gas system. The two valves required are a purge gas inlet valve and a high-pressure vent valve.
High-pressure side
of a gas piping system, all piping and components upstream of the pressure regulator, and in which the contained gas is at the same pressure as the gas cylinder or source. The high-pressure side includes the inlet chamber of the pressure regulator, as well as the cylinder pressure gauge. The term "high pressure" in this instance does not imply a particular value of pressure.
High-pressure vent (HPV) valve
a shutoff valve located on the high pressure side of a gas piping system that controls the release of gas from the system.
Hillock
a defect caused by stress that raises portions of a metal (such as aluminum) film above the surface of the film. Localized stress within the metal film may elevate portions of the film through the adjacent dielectric layer, resulting in a metal extrusion and a short to the next metal layer. Also see pyramid.
Histogram
a graph obtained by dividing the range of the data set into equal intervals and plotting the number of data points in each interval.
HMDS
see hexamethyldisilazane.
Hold-down latch
a mechanism for locking the box to the port plate.
Hole
1: of a semiconductor, a mobile vacancy in the electronic valence structure that acts like a positive electron charge with positive mass; the majority carrier in p-type material. [SEMI M1-94 and ASTM F1241] 2: in plastic and metal wafer carriers, the area through which a pin from another wafer carrier can enter for the transfer of wafers.
Homoepitaxy
a type of epitaxy in which a single-crystal layer is grown on a substrate of the same material. Contrast heteroepitaxy.
HOPG
see highly oriented pyrolytic graphite.
Horizontal furnace
a family of furnaces in which the wafers are loaded and processed in a horizontal tube.
Horizontal orientation
see wafers, horizontal.
Host
in automated material movement, the intelligent system that communicates with the equipment.
Hot carriers
those carriers, which may be either electrons or holes, that have been accelerated by the large traverse electric field between the source and the drain regions of a metal oxide semiconductor field-effect transistor (MOSFET). They can jeopardize the reliability of a semiconductor device when these carriers are scattered (that is, deflected) by phonons, ionized donors or acceptors, or other carriers. The scattering phenomenon can manifest itself as substrate current, gate current, or trapped charges.
Hot lot
a high-priority wafer lot.
Hot wall reactor
A machine (usually a CVD machine) in which the wafers are made hot because the walls of the reactor are hot. A cold wall reactor is a reactor in which the wafers are heated by some other means and so the walls of the reactor do not get as hot as the wafers.
Hot-carrier diode
see Schottky barrier diodes.
HPM
see hazardous production materials.
HVIC
High-Voltage Integrated Circuit. Utilizes DI (dielectric isolation) and JI (junction isolation) technologies to provide circuits that convert high-voltage incoming AC lines (120 and 240 volts, for example) to regulated DC output.
Hybrid circuit
(1) A combination of passive and active subminiature devices on an insulating substrate to perform a complete circuit function. (2) A combination of one or more integrated circuits with one or more discrete components. (3) The combination of more than one type of integrated circuit into a single package.
Hydrobromic acid (HBr)
an acid that is useful for dissolving solders.
Hydrochloric acid (HCl)
a poisonous solution of hydrogen chloride gas in water. This acid is pungent and highly corrosive.
Hydrofluoric acid (HF)
a poisonous solution of hydrogen fluoride gas in water. This colorless, fuming liquid is extremely corrosive and will etch glass. Hydrofluoric acid is used to etch silicon dioxide and, when combined with other acids, silicon.
Hydrogen (H2)
the lightest known gas; hydrogen vapors are highly flammable, colorless, odorless, tasteless, and nontoxic. Hydrogen is used as a means of providing a reducing atmosphere, as a carrier gas for epitaxial processes, and as a reagent to produce high-purity water. It sometimes is used in gas mixtures of fluorine-based plasma etchant for the processing of silicon dioxide film. Also see dry plasma etch.
Hydrogen chloride (HCl)
a colorless, pungent, corrosive gas having a suffocating odor. It is heavier than air and fumes strongly in moist air. Hydrogen chloride is very soluble in water and alcohol and less soluble in ether. In semiconductor processing, hydrogen chloride is used in such processes as etching, oxidation, passivation, and epitaxy. It also is used as a plasma and reactive ion etch of silicon and polysilicon, as well as aluminum metallization.
Hydrogen peroxide (H2O2)
1: a colorless, unstable compound, soluble in water and alcohol. 2: a compound used as a catalyst in many etch formulations, such as piranha.
Hydrophilic
having a strong affinity for water; wettable.
Hydrophobic
having little affinity for water; nonwettable.
Hypoxia
an abnormal deficiency of oxygen in the blood or tissues.
Hysteresis
in regulator performance testing, the pressure difference between readings, taken as flow is increased from a prescribed minimum to a prescribed maximum, and the pressure as the flow is decreased back to the prescribed minimum. The hysteresis curve represents the major loop developed over the entire operating range of the regulator, while the operating hysteresis value is calculated from a minor loop, developed over a limited flow range.
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