|
A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z |09
JFET
See junction field effect transistor.
JI
See junction isolation.
JIT
see just-in-time (JIT) delivery.
J-lead
an integrated circuit package lead configuration that in cross-section resembles the letter J.
Job aid
any device (whether in written, mechanical, electronic, or other form) that can be used by a worker to facilitate the performance of a job or task.
JTAG
Joint Test Action Group. (1) Test standards group working on boundary scan and standard test interfaces. (2) Any of the standards approved by this group.
Junction
see pn junction.
Junction field effect transistor (JFET)
A semiconductor device that operates by altering the conductivity of a region of the semiconductor (the channel) between two contacts (source and drain) by application of a voltage to a third terminal (gate). The current flow between source and drain is controlled by the gate voltage. In a JFET device, the gate voltage is applied to the channel across a P-N junction, in contrast to its application across an insulator in a conventional MOSFET. JFETs are of two types: P-channel and N-channel, depending on whether the channel is N-type or P-type. See FET, MOSFET.
Junction isolation (JI)
A fabrication technique by which components in an integrated circuit are separated or electrically isolated from each other by P-N junctions. Bipolar ICs generally begin with a P-type wafer into which a buried layer pattern is first diffused. Then the N-type epitaxial layer is grown, and P-type isolation wells are diffused around each area that is to be electrically isolated from the other circuitry. Compare dielectric isolation.
Junction spiking
the penetration of a junction by aluminum, which occurs when silicon near the junction dissolves in aluminum and migrates along the interconnect lines. Aluminum then replaces silicon at the junction.
Junction Temperature (TJ)
in measuring the thermal resistance of semiconductor device packages, the temperature of the semiconductor junction in which the major part of the heat is generated. The measured junction temperature is indicative only of the temperature in the immediate vicinity of the element used to measure the temperature. Junction temperature is measured in degrees Celsius. Also see integrated circuit (The "J" part of the abbreviation is written with a subscript capital letter.)
Junction-to-ambient thermal resistance
the thermal resistance from the semiconductor junction to a specified point in the surrounding ambient atmosphere. The thermal resistance is given by the temperature difference between the two points per unit of power dissipation into the semiconductor junction and is measured in degrees C/watt. Also called junction-to-specified reference point thermal resistance.
Junction-to-case thermal resistance
the thermal resistance from the semiconductor junction to a specified point on the exterior of the package. The thermal resistance is given by the temperature difference between the two points per unit of power dissipation and is measured in degrees C/watt.
Junction-to-specified reference point thermal resistance
see junction-to-ambient thermal resistance.
Just-In-Time (JIT)
delivery an inventory-control method of ordering process materials on an as-needed basis; eliminates much of the expense and many of the environmental concerns of maintaining an onsite inventory.
|
| Deutsch | Contact | Newsletter | Sitemap | Search | Text version | Glossary
